r1200f thru R2000F 500 milliamp high voltage fast recovery silicon rectifier 1200 to 2000 volts features low cost low leakage low forward voltage drop high current capability high voltage fast switching for higher efficiency maximum ratings operating temperature: - 5 5 c to +15 0 c storage temperature: - 5 5 c to +15 0 c catalog number device marking maximum rec urrent peak reverse voltage maximum rms voltage maximum dc blocking voltage r1200 f --- 1200v 840v 1200v r1500 f --- 1500v 1050v 1500v r1800 f --- 1800v 1260v 1800v r2000 f --- 2000v 1400v 2000v electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 500ma t a = 50 c peak forward surge current i fsm 30a 8.3ms, half sine maximum instantaneous forward voltage r1200 f -r1800 f r2000 f v f 2. 4 v 4 . 0 v i fm = 0.5a; t a = 50 c maximum dc reverse current at rated dc blocking voltage i r 5.0 m a 50 m a t a = 25 c t a = 100 c typical junction capacitance c j 30pf measured at 1.0mhz, v r =4.0v maximum reverse recovery time t rr 500ns do-41 dimensions inches mm dim min max min max note a .166 .205 4.10 5.20 b .080 .107 2.00 2.70 c .028 .034 .70 .90 d 1.000 --- 25.40 --- a b c d d cathode mark ww w . cn ele ct r .com shanghai lunsure electronic technology co.,ltd tel:0086-21-37185008 fax:0086-21-57152769
r1200f th ru R2000F 1 100 4 0 5 10 15 8 figure 3 peak forward surge current peak forward surge current - amperes versus number of cycles at 60hz - cycles amps cycles 2 6 10 20 60 80 40 20 25 30 instantaneous reverse current - micro amps versus percent of rated peak reverse voltage - volts figure 1 typical reverse characteristics 0 120 20 40 60 80 .01 .02 .04 .06 t j = 25 c m a volts 100 .08 .1 .2 .4 .6 .8 1 2 4 average forward rectified current - amperes versus ambient temperature - c figure 2 forward derating curve 0 15025 50 75 100 0 100 200 300 single phase, half wave 60hz resistive or inductive load m a c 125 400 500 600 ww w . cn electr .com
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